Multi-pulse LIBDE of fused silica at different thicknesses of the organic absorber layer

Laser-induced etching techniques feature several unique characteristics that enable ultraprecise machining of transparent materials. However, LIBDE (laser-induced back side dry etching) and LIBWE (laser-induced back side wet etching) are preferentially studied due to experimental feasibilities eithe...

Teljes leírás

Elmentve itt :
Bibliográfiai részletek
Szerzők: Pan Yunxiang
Ehrhardt Martin
Lorenz Pierre
Han Bing
Hopp Béla
Vass Csaba
Ni Xiaowu
Zimmer Klaus
Dokumentumtípus: Cikk
Megjelent: Elsevier 2015
Sorozat:APPLIED SURFACE SCIENCE 359
doi:10.1016/j.apsusc.2015.10.095

mtmt:3042569
Online Access:http://publicatio.bibl.u-szeged.hu/9091
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245 1 0 |a Multi-pulse LIBDE of fused silica at different thicknesses of the organic absorber layer  |h [elektronikus dokumentum] /  |c  Pan Yunxiang 
260 |a Elsevier  |c 2015 
300 |a 449-454 
490 0 |a APPLIED SURFACE SCIENCE  |v 359 
520 3 |a Laser-induced etching techniques feature several unique characteristics that enable ultraprecise machining of transparent materials. However, LIBDE (laser-induced back side dry etching) and LIBWE (laser-induced back side wet etching) are preferentially studied due to experimental feasibilities either using a very thin or a bulk absorber at the rear side of the transparent material. This study aims to fill the gap by examining the thickness dependence of the absorbing material. Multi-pulse-LIBDE (MP-LIBDE) of fused silica using different thick photoresist absorber layers (d(L) = 0.2-11.7 mu m) was performed with a KrF excimer laser lambda. = 248 nm, t(p) approximate to 20 ns). The influence of several experimental parameters, such as laser fluence, pulse number, film thickness, on the ablation morphology and the etching rate were investigated. Especially at moderate fluences (F = 0.7-1.5 J/cm(2)) MP-LIBDE and LIBWE show several similar process characteristics such as the etching rate dependence on the laser fluence and the pulse number with a typical etching rate of approx. 12 nm at 1 J/cm(2). However, the specific etching rate values depend on the absorber layer thickness, for instance. The morphology of the etched surface is smooth with a roughness of below 5 nm rms. Further, the modification of the surface has been observed and will be discussed in relation to the multi-pulse laser etching mechanism. (C) 2015 Elsevier B.V. All rights reserved. 
700 0 1 |a Ehrhardt Martin  |e aut 
700 0 1 |a Lorenz Pierre  |e aut 
700 0 1 |a Han Bing  |e aut 
700 0 1 |a Hopp Béla  |e aut 
700 0 1 |a Vass Csaba  |e aut 
700 0 1 |a Ni Xiaowu  |e aut 
700 0 1 |a Zimmer Klaus  |e aut 
856 4 0 |u http://publicatio.bibl.u-szeged.hu/9091/1/2015_Pan_Appl.Surf.Sci.359_449_454_u.pdf  |z Dokumentum-elérés